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| AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is a Green Product ordering option. AOD4106 and AOD4106L are electrically identical. Features VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5m (VGS = 20V) RDS(ON) < 6.5m (VGS = 12V) RDS(ON) < 8.1m (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation A C C Maximum 25 30 50 50 180 30 135 75 38 6.25 4 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 15 41 1.5 Max 20 50 2.0 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD4106 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS= 30V VDS=VGS ID=250A VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G 2 180 4.1 6.5 5.4 6.6 26 0.7 1 50 1561 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 642 323 2.5 26.5 VGS=10V, VDS=12.5V, ID=20A 22.5 8.3 10 12 VGS=10V, VDS=12.5V, RL=0.63, RGEN=3 IF=20A, dI/dt=100A/s 19 17 9.5 32 24 40 3.8 33 1875 6.5 8.1 5.0 3 Min 25 1 5 100 4 Typ Max Units V uA nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on t<10s R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. Re0: Sept. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD4106 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 20V 150 120 ID (A) ID(A) 90 Vgs=8V 60 30 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 10 Normalized On-Resistance 1.6 ID=20A 8 RDS(ON) (m) VGS=10V 1.4 1.2 VGS=10V 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=20V VGS=12V Vgs=7V 15V 12V VGS=10V 50 40 30 20 10 0 3 4 5 6 7 8 9 10 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C -40C 60 VDS=5V 6 VGS=12V VGS=20V 4 2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 15 12 RDS(ON) (m) 9 6 3 0 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E+02 1.0E+01 ID=20A 1.0E+00 25C IS (A) 125C 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics -40C 125C Alpha & Omega Semiconductor, Ltd. AOD4106 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 12 10 VGS (Volts) 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=12.5V ID=20A 2500 2000 Capacitance (pF) Ciss 1500 1000 500 0 0 5 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10 30 Coss 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C 10s RDS(ON) limited DC 100s 1ms 10ms Power (W) 220 200 180 160 140 120 100 80 60 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 TJ(Max)=175C TC=25C Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJc.RJc RJC=2C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD4106 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 ID(A), Peak Avalanche Current Power Dissipation (W) 120 100 80 60 40 20 0 1.00E-06 TA=150C TA=25C 80 70 60 50 40 30 20 10 0 1.00E-05 1.00E-04 1.00E-03 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 50 Current rating ID(A) 40 Power (W) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 140 120 100 80 60 40 20 0 0.01 TJ(max)=150C TA=25C 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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